Related papers: Spin Valve Effect in Self-exchange Biased Ferromag…
We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two…
We demonstrate the spin valve effect by ballistic transport in fully epitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAs:MnAs granular hybrid heterostructures. The GaAs:MnAs material contains ferromagnetic MnAs nanoparticles in a…
We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (GaMnAs) in bilayer and trilayer heterostructures. An exchange spring model…
We carefully investigated the ferromagnetic coupling in the as-grown and annealed ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices. We observed that the magnetic interaction between the two layers strongly affects the…
In this work we study the transport properties of hybrids that consist of exchange biased ferromagnets (FMs) combined with a low-Tc superconductor (SC). Not only different FMs but also various structural topologies have been investigated:…
The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion…
Based on a multi-scale calculations, combining ab-initio methods with spin dynamics simulations, we perform a detailed study of the magnetic behavior of Ni2MnAl/Fe bilayers. Our simulations show that such a bilayer exhibits a small exchange…
We studied the magnetic behavior of bilayers of multiferroic and nominally antiferromagnetic o-YMnO$_3$ (375~nm thick) and ferromagnetic La$_{0.7}$Sr$_{0.3}$MnO$_3$ and La$_{0.67}$Ca$_{0.33}$MnO$_3$ ($8 \ldots 225~$nm), in particular the…
Nonlinear current-voltage characteristics and magnetoresistance of point contacts between a normal metal (N) and films of amorphous ferromagnet (F) Co40Fe40B20 of different thickness, exchange-biased by antiferromagnetic Mn80Ir20 are…
We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low…
We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a…
We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-xMnxAs) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer…
We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP) configuration in (Ga,Fe)Sb / InAs (thickness $t_\mathrm{InAs}$ nm) / (Ga,Fe)Sb trilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with…
The interlayer coupling between (Ga,Mn)As ferromagnetic layers in all-semiconductor superlattices is studied theoretically within a tight-binding model, which takes into account the crystal, band and magnetic structure of the constituent…
We have performed magnetic measurements like temperature (T), cooling field (HFC) dependence of exchange bias (EB) and training effect to investigate the magnetic nature of the interface of the Fe/Ir20Mn80 systems. Thin film bilayer samples…
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by…
We have used polarized neutron reflectometry to study the structural and magnetic properties of the individual layers in a series of (Al,Be,Ga)As/(Ga,Mn)As/GaAs/(Ga,Mn)As multilayer samples. Structurally, we observe that the samples are…
Van der Waals magnetic materials are currently of great interest as materials for applications in future ultrathin nanoelectronics and nanospintronics. Due to weak coupling between individual monolayers, these materials can be easily…
The spin dynamics of the ferromagnetic pinned layer of ferro-antiferromagnetic coupled NiFe/MnNi bilayers is investigated in a broad frequency range (30 MHz-6 GHz). A phenomenological model based on the Landau-Lifshitz equation for the…
We report the measurement of spin waves in the bilayer colossal magnetoresistive manganites La(2-2x)Sr(1+2x)Mn2O7 with x=0.30, 0.35 and 0.40. For x=0.35 and 0.40 the entire acoustic and optic dispersion relations are reasonably well…