Related papers: Spin Valve Effect in Self-exchange Biased Ferromag…
We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate…
Spin angular momentum transfer in magnetic bilayers offers the possibility of ultrafast and low-loss operation for next-generation spintronic devices. We report the field- and temperature- dependent measurements on the magnetization…
Magnetic properties of (Ga,Mn)As/GaAs superlattices are investigated. The structures contain magnetic (Ga,Mn)As layers, separated by thin layers of non-magnetic GaAs spacer. The short period Ga$_{0.93}$Mn$_{0.07}$As/GaAs superlattices…
Strong ferromagnetic interlayer exchange couplings $J$ in perpendicularly magnetized systems are becoming increasingly desirable for applications. We study whether ferromagnetic interlayer exchange couplings can be measured by a combination…
In this work, we present an experimental study of spin mediated enhanced negative magnetoresistance in Ni80Fe20 (50 nm)/p-Si (350 nm) bilayer. The resistance measurement shows a reduction of ~2.5% for the bilayer specimen as compared to…
Half-metallicity in materials has been a subject of extensive research due to its potential for applications in spintronics. Ferromagnetic manganites have been seen as a good candidate, and aside from a small minority-spin pocket observed…
We consider charge transport properties in realistic, fabricable, Ferromagnet/Superconductor spin valves having a layered structure $F_1/N/F_2/S$, where $F_1$ and $F_2$ denote the ferromagnets, $S$ the superconductor, and $N$ the normal…
In F/S/F trilayers where the magnetization directions of the F layers can be controlled separately, it has theoretically been predicted that the antiparallel (AP) configuration can have a higher superconducting transition temperature T_c…
The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic multilayers. Recently, new types…
Ferromagnetic insulators can induce a strong exchange field in an adjacent superconductor via the magnetic proximity effect. This manifests as spin-splitting of the BCS density of states of the superconductor, an important ingredient for…
In this study, the magnetic reversal process of exchange-coupled bilayer systems, consisting of a ferrimagnetic TbFeCo alloy layer and a ferromagnetic [Co/Ni/Pt]N multilayer, was investigated. In particular, minor loop studies, probing…
Van der Waals (vdW) heterostructures consisting of bilayer graphene (BLG) encapsulated within monolayers of strong spin-orbit semiconductor WS$_2$ or ferromagnetic semiconductor Cr$_2$Ge$_2$Te$_6$ (CGT), are investigated. By performing…
Extensive studies on the impact of bismuth incorporation into the (Ga,Mn)As prototype dilute ferromagnetic semiconductor (DFS) on its structural, magnetic and magnetotransport properties are summarized in this review. Thin epitaxial layers…
Geometric frustration among competing spin exchanges can give rise to novel quantum phases by enhancing fluctuations that drive magnetic systems beyond the classical regime. We investigate the frustrated array of strongly correlated spin…
Heterostructures of normal metals (N) and magnetic insulators (F) show paradigmatic effects, such as spin-Hall magnetoresistance and electric drag currents. These effects are linear in the applied electric field $E(\omega)$. Normal-metal…
Nonreciprocal spin-wave propagation in bilayer ferromagnetic systems has attracted significant attention due to its potential to precisely quantify material parameters as well as for applications in magnonic logic and information…
Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find nearly a ten-fold increase of SMR in W/CoFeB compared to previously studied…
The discovery of ferromagnetism in Mn doped GaAs [1] has ignited interest in the development of semiconductor technologies based on electron spin and has led to several proof-of-concept spintronic devices [2-4]. A major hurdle for realistic…
Using a three-dimensional focused-ion beam lithography process we have fabricated nanopillar devices which show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent…
We study the non-collinear exchange coupling across a trilayer magnetic junction consisting of two ferromagnets separated by a thin dilute magnetic semiconductor containing itinerant carriers with finite spin relaxation. It is remarkable…