Related papers: Current-voltage characteristics of semiconductor/f…
We study theoretically a junction consisting of a normal metal, PT-symmetric non-Hermitian superconductor, and an insulating thin layer between them (N-I-PTS junction). We calculate current-voltage characteristics for this junction using…
The coherent mixing of the current states in the superconducting weak link subject to a Josephson phase difference $\phi$ and subject to an external transport current in the banks is one of the aims of this work. At $\phi=\pi $ the nonlocal…
The spin flip of the conduction electrons at the interface of a ferromagnetic and a nonmagnetic part of a metallic wire, suspended between two electrodes, is shown to tort the wire when a current is driven through it. In order to enhance…
We review the statics and dynamics of electric-field domains on doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a…
We review the occurrence of electric-field domains in doped superlattices within a discrete drift model. A complete analysis of the construction and stability of stationary field profiles having two domains is carried out. As a consequence,…
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…
Electronic processes in a semiconductor system consisting of some Resonant Tunnelling Structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant…
The injection of pure spin current into superconductors by the dynamics of a ferromagnetic contact is studied theoretically. Taking into account suppression of the order parameter at the interfaces (inverse proximity effect) and the…
We investigate static charge and spin density modulation patterns along a ferromagnet/semiconductor single junction quantum wire in the presence of spin-orbit coupling. Coherent scattering theory is used to calculate the charge and spin…
We calculate the response of a ferromagnet - antiferromagnet junction to a high-frequency magnetic field as a function of the spin-polarized current through the junction. Conditions are choused under which the response is zero in absence of…
The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…
We analyze the electrical characteristics of a circuit consisting of a free thin-film magnetic layer and source and drain electrodes that have opposite magnetization orientations along the free magnet's two hard directions. We find that…
Selective and large polarization of current injected into semiconductor (SC) is predicted in Ferromagnet (FM)/Quantum Dot (QD)/SC system by varying the gate voltage above the Kondo temperature. In addition, spin-dependent Kondo effect is…
Unlike junctions in solid-state devices, a plasma-metal junction (pm-junction) is a junction of classical and quantum electrons. The plasma electrons are Maxwellain in nature, while metal electrons obey the Fermi-Dirac distribution. In this…
We study the Josephson current in a junction comprising two superconductors linked by a strong ferromagnet in presence of impurities. We focus on a regime where the electron (and hole) motion is ballistic over the exchange length and…
We investigate spin transport in voltage-biased spin-active Josephson junctions. The interplay of spin filtering, spin mixing, and multiple Andreev reflection leads to nonlinear voltage dependence of the dc and ac spin current. We compute…
The influence of an intramolecular proton transfer reaction on the conductance of a molecular junction is investigated employing a generic model, which includes the effects of the electric field of the gate and leads electrodes and the…
In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type…
Using the tight-binding model and the generalized Green's function formalism, the effect of quantum interference on the electron transport through the benzene molecule in a semiconductor/benzene/semiconductor junction is numerically…