Related papers: Characterization of high-temperature PbTe p-n junc…
We show that in a simple experiment at undergraduate level, suitable to be performed in classes of science and engineering students, it is possible to test accurately, on a popular 1N4148 p-n diode, the range of the junction currents where…
A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI…
Superconducting diodes, characterized by nonreciprocal supercurrent transport, offer transformative opportunities for ultra-low-power circuits. However, achieving reliable operation at temperatures above liquid nitrogen remains a major…
The electronic, phonon and thermoelectric transport properties of (PbTe)2 layer are systematically investigated by using first-principles pseudopotential method and Boltzmann transport equation. Our calculations demonstrate that there is a…
Rectification properties of semiconductor p-n junction diodes are the basic and important characteristics for electronic device evaluation, especially for novel semiconductor materials. Today's semiconductor devices' fabrication and…
In the present work, we report the synthesis of Pb-Bi alloy with enhanced Tc of up to 9K, which is higher than that of Pb. The alloy is synthesized via a solid-state reaction route in the vacuum-encapsulated quartz tube at 7000C in an…
In this work, we try to understand the experimental thermoelectric (TE) properties of a ZrNiSn sample with DFT and semiclassical transport calculations using SCAN functional. SCAN and mBJ provide the same band gap $E_{g}$ of $\sim$0.54 eV.…
Unlike in many other semiconductors, the band gap of PbTe increases considerably with temperature. We compute the thermoelectric transport properties of n-type PbTe from first principles including the temperature variation of the electronic…
We report temperature-dependent current-voltage (I - V - T) and output light power-voltage or current (P - V - T) or (P - I - T) characteristics of 1550 nm tunneling injection quantum dot (TI QD) laser diodes. Experimental data is…
This study presents ion temperature (\(T_i\)) measurements in the MAST-U divertor, using a Retarding Field Energy Analyzer (RFEA). Steady state measurements were made during an L-Mode plasma with the strike point on the RFEA. ELM…
We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in…
We report on the temperature dependence of the low-frequency electronic noise in NiO$_x$/Ga$_2$O$_3$ p-n heterojunction diodes. The noise spectral density is of the 1/f-type near room temperature but shows signatures of Lorentzian…
We carefully investigate three important effects including postgrowth activation annealing, delta ({\delta}) dose and p+-GaN layer thickness and experimentally demonstrate their influence on the electrical properties of GaN p-n homojunction…
We report measurements on the high temperature ionic and low temperature electronic properties of the 3D topological insulator Bi$_2$Te$_2$Se using ion-implanted $^8$Li $\beta$-detected nuclear magnetic relaxation and resonance. With…
The transport characteristics across the pulsed laser deposited Ni0.07Zn0.93O/Mg0.21Zn0.79O heterojunction exhibits p-n type semiconducting properties at 10 K while at 100 K, its characteristics become similar to that of an n-n junction.…
Pb$_{0.77}$Sn$_{0.23}$Se is a novel alloy of two promising thermoelectric materials PbSe and SnSe that exhibits a temperature dependent band inversion below 300 K. Recent work has shown that this band inversion also coincides with a trivial…
The electronic and thermoelectric properties of molecular junctions formed from iron and ruthenium metal-acetylide were studied using complementary experimental techniques and quantum chemical simulations. We performed physical…
In this study, we performed high-pressure electrical resistivity measurements of polycrystalline FeSe in the pressure range of 1-16.0 GPa at temperatures of 4-300 K. A precise evaluation of Tc from zero-resistivity temperatures revealed…
We consider a junction between surface $p$-type and surface $n$-type on an ideal topological insulator in which carrier type and density in two adjacent regions are locally controlled by composition graded doping or electrical gating. Such…
Excellent thermoelectric performance in the out-of-layer n-doped SnSe has been observed experimentally (Chang et al., Science 360, 778-783 (2018)). However, a first-principles investigation of the dominant scattering mechanisms governing…