Related papers: Characterization of high-temperature PbTe p-n junc…
Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of…
We used 2D coupled sine-Gordon equations combined with 3D heat diffusion equations to numerically investigate the thermal and electromagnetic properties of a $250 \times 70\,\mu\mathrm{m}^2$ intrinsic Josephson junction stack. The 700…
${\beta}$-Ga${_2}$O${_3}$ based semiconductor devices are expected to have significantly improved high-power and high-temperature performance due to its ultra-wide bandgap of close to 5 eV. However, the high-temperature operation of these…
We have investigated metallic break junctions of the heavy-fermion compound UPd2Al3 at low temperatures between 0.1K and 9K and in magnetic fields up to 8T. Both the current-voltage I(V) characteristics and the dV/dI (V) spectra clearly…
This study presents the first ion temperature (\(T_i\)) measurements from the MAST-U divertor using a Retarding Field Energy Analyzer (RFEA). Embedded within the flat tile of the closed divertor chamber, the RFEA captures \(T_i\) profiles…
We used one-dimensional coupled sine-Gordon equations combined with heat diffusion equations to numerically investigate the thermal and electromagnetic properties of a $300\,\mu\mathrm{m}$ long intrinsic Josephson junction stack consisting…
We report transport measurements on Josephson junctions consisting of Bi2Te3 topological insulator (TI) thin films contacted by superconducting Nb electrodes. For a device with junction length L = 134 nm, the critical supercurrent Ic can be…
Sn(1-x)In(x)Te is a possible candidate for topological superconductivity. Previous work has shown that substitution of In for Sn in the topological crystalline insulator SnTe results in superconductivity, with the transition temperature,…
NiO/Ga$_{2}$O$_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we report on the time evolution of the static electrical…
The fabrication, initial structural characterization and diode measurements are reported for the first boron carbide / silicon carbide heterojunction diode. Current-voltage curves obtained for operation at temperatures from 24 C to 388 C.…
The authors report on electron transport studies on superconductor-semiconductor hybrid structures of indium and n-type lead telluride, either in the form of quantum wells or bulk crystals. In-PbTe contacts form by spontaneous alloying,…
The Josephson junction (JJ) is the corner stone of superconducting electronics and quantum information processing. While the technology for fabricating low $T_{c}$ JJ is mature and delivers quantum circuits able to reach the "quantum…
The ferroelectric degenerate semiconductor Sn$_{1-\delta}$Te exhibits superconductivity with critical temperatures, $T_c$, of up to 0.3 K for hole densities of order 10$^{21}$ cm$^{-3}$. When doped on the tin site with greater than $x_c$ $=…
Recent development in fabrication technology of planar two-dimensional (2D) materials has brought up possibilities of numerous novel applications. Our recent analysis has revealed that by definition of p-n junctions through appropriate…
Similar to the diode in electronics, a thermal diode is a two-terminal device that allows heat to transfer easier in one direction (forward bias) than in the opposite direction (reverse bias). Unlike conductive and convective thermal…
$\beta$-Ga$_2$O$_3$-based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are thus promising for applications in power electronic devices and harsh-environment…
We report a novel approach for crafting robust diamond/\b{eta}-Ga2O3 hetero-p-n-junctions through the mechanical integration of their bulk materials. This resulting heterojunction, with a turn-on voltage of ~2.7 V at room temperature,…
Measurements of conductance spectra in a superconductor - topological insulator - normal metal thin film junctions of NbN-$\rm Bi_2Se_3$-Au are reported. Junctions with ex-situ and in-situ prepared $\rm NbN-Bi_2Se_3$ interfaces were…
The technique of obtaining of p+-n-type gallium phosphide diode epitaxial structures from liquid phase was developed as well as pilot samples of diode temperature sensors were fabricated based on them. Thermometric and current-voltage…
Using first-principles approaches, this study investigated the efficiency of energy conversion in nanojunctions, described by the thermoelectric figure of merit $ZT$. We obtained the qualitative and quantitative descriptions for the…