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Perovskite-based optoelectronic devices have gained significant attention due to their remarkable performance and low processing cost, particularly for solar cells. However, for perovskite light-emitting diodes (LEDs), non-radiative charge…
The conversion efficiency of ultra-thin solar cells based on layered materials has been limited by their open-circuit voltage, which is typically pinned to a value under 0.6 V. Here we report an open-circuit voltage of 1.02 V in a 120…
Embedding a double barrier resonant tunnelling diode (RTD) in an unipolar InGaAlAs optical waveguide gives rise to a very low driving voltage electroabsorption modulator (EAM) at optical wavelengths around 1550 nm. The presence of the RTD…
Thermal diode, a type of device that allows heat to flow in one direction preferentially, can be employed in many thermal applications. However, if the mechanical compliance of the thermal diode is poor, which prevents its intimate contact…
The semiconducting p-n junction is a simple device structure with great relevance for electronic and optoelectronic applications. The successful integration of low-dimensional materials in electronic circuits has opened the way forward for…
The turn-on voltage of an LED is an important parameter as it determined the power consumption of the LED and influences the effective power conversion efficiency.
Electron injection from an adsorbed molecule to the substrate (heterogeneous electron transfer) is studied. One reaction coordinate is used to model this process. The surface phonons and/or the electron-hole pairs together with the internal…
Electrowetting on dielectric is demonstrated with a thin spin-coated fluoropolymer over an aluminum electrode. Previous efforts to use thin spin-coated dielectric layers for electrowetting have shown limited success due to defects in the…
We report spectroscopy experiments of rubidium vapor in a high magnetic field under conditions of electromagnetically induced transparency (EIT) and optical pumping. The 1.1 T static magnetic field decouples nuclear and electronic spins and…
Photon impingement is capable of liberating electrons in semiconductors. When the electron transport is primarily governed by temperature gradients, high irreversibilities will result, thus lowering converters' efficiencies. A fundamental…
We report on an all-optical switch that operates at low light levels. It consists of laser beams counterpropagating through a warm rubidium vapor that induce an off-axis optical pattern. A switching laser beam causes this pattern to rotate…
The standard equations for semiconductor device analysis were solved by specifying the electron and hole current injected at a small contact, assuming high-level injection. Calculated current-voltage characteristics were fit to measurements…
We observed electromagnetically induced transparency (EIT) and dark fluorescence in a cascade three-level diatomic Lithium system using Optical-Optical Double Resonance (OODR) spectroscopy. When a strong coupling laser couples the…
We demonstrate a fabrication scheme for clean suspended structures using chemical-vapor-deposition-grown graphene and a dry transfer method on lift-off-resist-coated substrates to facilitate suspended graphene nanoelectronic devices for…
This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer…
A growing interest in colloidal quantum dot (QD) based light-emitting diodes (QD-LEDs) has been motivated by the exceptional color purity and spectral tunability of QD emission as well as the amenability of QD materials to highly scalable…
It has been recently claimed that bulk crystals of transition metal dichalcogenide (TMD) ReS$_2$ are direct band gap semiconductors, which would make this material an ideal candidate, among all TMDs, for the realization of efficient…
Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating…
Unbalanced mobility and injection of charge carriers in metal-halide perovskite light-emitting devices pose severe limitations to the efficiency and response time of the electroluminescence. Modulation of gate bias in methylammonium lead…
Photon interconversion in semiconductors is of fundamental importance for digital imaging and quantum sensing. Nonlinear processes such as triplet-triplet annihilation (TTA) offer photon upconversion (UC) at yields desired for solid-state…