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Narrow gaps are formed in suspended single to few layer graphene devices using a pulsed electrical breakdown technique. The conductance of the resulting devices can be programmed by the application of voltage pulses, with a voltage of…
Quasi-two-dimensional (quasi-2D) metal halide perovskites exhibit rich phase heterogeneity that profoundly influences light-matter interactions and charge transport. However, the fundamental mechanisms governing carrier transfer across…
We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find…
Similar to the hybridization of three atoms, three coupled resonators interact to form bonding, anti-bonding and non-bonding modes. The non-bonding mode enables an electromagnetic induced transparency like transfer of energy. Here the…
A single-electron inverter was fabricated that switches from a high output to a low output when a fraction of an electron is added to the input. For the proper operation of the inverter, the two single-electron transistors that make up the…
We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output…
Solid-state heat-to-electrical power converters are thermodynamic engines that use fundamental particles, such as electrons or photons, as working fluids. Virtually all commercially available devices are thermoelectric generators, in which…
Frequency up-conversion of a few low-energy photons into a single high-energy photon contributes to imaging, light sources, and detection. However, the up-converting of many photons exhibits negligible efficiency. Up-conversion through…
We developed a capacitor type heat flow switching device, in which electron thermal conductivity of the electrodes is actively controlled through the carrier concentration varied by an applied bias voltage. The devices consist of an…
We show by systemically experimental investigation that gas-flow-induced voltage in monolayer graphene is more than twenty times of that in bulk graphite. Examination over samples with sheet resistances ranging from 307 to 1600 {\Omega}/sq…
We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is…
The possibility of using single molecule junctions as electron pumps for energy conversion and storage is considered. It is argued that the small dimensions of these systems enable to make use of unique intra-molecular quantum coherences in…
We propose making light emitting diodes out of inverse spin valves. The proposed diodes rely on the spin-dependent electron transport of inverse spin valves that are layered structures of a ferromagnetic half-metal sandwiched between two…
Alternating current electroluminescent technology allows the fabrication of large area, flat and flexible lights. Presently the maximum size of a continuous panel is limited by the high resistivity of available transparent electrode…
Atomically thin circuits have recently been explored for applications in next-generation electronics and optoelectronics and have been demonstrated with two-dimensional lateral heterojunctions. In order to form true 2D circuitry from a…
Photoreflectance is used for the characterisation of semiconductor samples, usually by sweeping the monochromatized probe beam within the energy range comprised between the highest value set by the pump beam and the lowest absorption…
Low-index transparent conducting oxides have attracted significant attention because ultrafast optical excitation in these materials can induce exceptionally large temporal index gradients. Due to this remarkable nonlinear optical…
In this article we present high-resolution angle-resolved photoemission (ARPES) spectra of the heavy-fermion superconductor URu$_2$Si$_2$. Measurements as a function of both excitation energy and temperature allow us to disentangle a…
Upconversion of sub-band-gap photons constitutes a promising way for improving the efficiency of silicon-based solar cells beyond the Shockley-Queisser limit. 1500 to 980 nm upconversion by trivalent erbium ions is well-suited for this…
Graphene is of interest in the development of next-generation electronics due to its high electron mobility, flexibility and stability. However, graphene transistors have poor on/off current ratios because of the absence of a bandgap. One…