Related papers: A Surface-Gated InSb Quantum Well Single Electron …

Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…

Due to a strong spin-orbit interaction and a large Land\'e g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are…

In a GaAs/AlGaAs two-dimensional electron system with two occupied subbands, the experimentally determined phase diagram in the density-magnetic field plane exhibits rich topological features. Ring-like structures are observed at even…

For a quantum dot (QD) in the intermediate regime between integrable and fully chaotic, the widths of single-particle levels naturally differ by orders of magnitude. In particular, the width of one strongly coupled level may be larger than…

A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and…

Semiconductor InSb nanowires present a highly intriguing platform with immense potential for applications in spintronics and topological quantum devices. The narrow band gap exhibited by InSb allows for precise tuning of these nanowires,…

Solid-state quantum computer architectures with qubits encoded using single atoms are now feasible given recent advances in atomic doping of semiconductors. Here we present a charge qubit consisting of two dopant atoms in a semiconductor…

Hybrid structures incorpora1ng both III-nitride and Transi1on Metal Dichalcogenide (TMD) semiconductors have strong applica1on poten1al for light harves1ng and optoelectronics. Here we have inves1gated the proper1es of hybrid structures…

The adiabatic pumped current through an unbiased one dimensional (1D) channel, connected to two 1D leads and subject to surface acoustic waves (SAW), is calculated exactly for non-interacting electrons. For a broad range of the parameters,…

We have studied a series of InAs/GaSb coupled quantum wells using magneto-infrared spectroscopy for high magnetic fields up to 33T within temperatures ranging from 4K to 45K in both Faraday and tilted field geometries. This type of coupled…

The quantum transport of electrons in an artificial atom, such as a quantum dot (QD), is governed by the Coulomb blockade (CB) effects, revealing the ground-state charge configuration of the electronic system under interplays of the on-site…

We investigate non-linear magneto-transport in a Hall bar device made from a strained InGaAs/InP quantum well: a material system with attractive spintronic properties. From extensive maps of the longitudinal differential resistance (r_xx)…

We have characterized the electronic properties of a high-mobility two-dimensional electron system in modulation doped InAsSb quantum wells and compare them to InSb quantum wells grown in a similar fashion. Using temperature-dependent…

Finding a quantum battery model that demonstrates a quantum advantage while remaining feasible for experimental production is a considerable challenge. Here, a superconducting quantum battery (SQB) model that exhibits such an advantage is…

Scaling down the GaN channel in a double heterostructure AlGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT) to the thicknesses on the order of or even smaller than the Bohr radius confines electrons in the quantum well even at low…

Electron-hole hybridization in InAs/GaSb double quantum well structures leads to the formation of a mini band gap. We experimentally and theoretically studied the impact of strain on the transport properties of this material system. Thinned…

The electron acceptor molecule TCNQ is found in either of two distinct integer charge states when embedded into a monolayer of a charge transfer-complex on a gold surface. Scanning tun- neling spectroscopy measurements identify these states…

Surface acoustic waves (SAW) have large potential to realize quantum-optics-like experiments with single flying electrons employing their spin or charge degree of freedom. For such quantum applications, highly efficient trapping of the…

We provide a physical analysis of the charging and detection of the first few electrons in a laterally-coupled GaAs/AlGaAs quantum dot (LCQD) circuit with integrated quantum point contact (QPC) read-out. Our analysis is based on the…

A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport…