Related papers: Donor type semiconductor at low temperature as mas…
We study theoretically nonradiative and radiative energy transfer between two localized quantum emitters, donor one (i.e. initially excited) and acceptor one (i.e. receiving the excitation). The rates of nonradiative and radiative processes…
Laser diodes with optical feedback can exhibit periodic intensity oscillations at or near the relaxation-oscillation frequency. We demonstrate optoelectronic oscillators based on external-cavity semiconductor lasers in a periodic dynamical…
A mathematical model is introduced which describes the dissipation of electrons in lightly doped semi-conductors. The dissipation operator is proved to be densely defined and positive and to generate a Markov semigroup of operators. The…
We predict a new type of the negative-$U$ Anderson impurity formed in a triple quantum dot. The two dots of the system behave as a negative-$U$ impurity preferring zero or double electron occupancy rather than single occupancy, and the…
It has been theoretically shown that in large-density semiconductor plasma there exist an energy level of a bound electron-hole pair (a composite boson) at the band gap. Filling this level up occurs through the condensation of electron-hole…
Organic electrochemical transistors offer powerful functionalities for biosensors and neuroinspired electronics, with still much to understand on the time dependent behavior of this electrochemical device. Here, we report on distributed…
We consider the superconducting state of $d+s$ symmetry with finite concentration of Anderson impurities in the limit $\Delta_s/\Delta_d \ll 1$. The model consists of a BCS-like term in the Hamiltonian and the Anderson impurity treated in…
Negative values of the Casimir entropy occur quite frequently at low temperatures in arrangements of metallic objects. The physical reason lies either in the dissipative nature of the metals as is the case for the plane-plane geometry or in…
We propose a new concept of an electron source for ultrafast electron diffraction with sub-10~fs temporal resolution. Electrons are generated in a laser-plasma accelerator, able to deliver femtosecond electron bunches at 5 MeV energy with…
Whereas the laser is nowadays an ubiquitous technology, applications for its microwave analogue, the maser, remain highly specialized, despite the excellent low-noise microwave amplification properties. The widespread application of masers…
We analyze the use of layered superconductors as anisotropic metamaterials. Layered superconductors can have a negative refraction index in a wide frequency range for arbitrary incident angles. Indeed, low-Tc (s-wave) superconductors allow…
When a one-atom maser is operated in the standard way -- excited, resonant two-level atoms traverse the resonator at random times -- the emerging atoms are entangled with the cavity field. As a consequence, the results of measurements on…
We have theoretically studied the effect of an electric field on the energy levels of shallow donors and acceptors in silicon. An analysis of the electric field dependence of the lowest energy states in donors and acceptors is presented,…
We derive a solvable resonant-level type model, to describe an impurity spin coupled to zero-energy bound states localized at the edge of a one dimensional d-wave superconductor. This results in a two-channel Kondo effect with a quite…
Spatial separation of water dimer from water monomer and larger water-clusters through the electric deflector is presented. A beam of water dimer with $93~\%$ purity and a rotational temperature of $1.5~$K was obtained. Following…
Using bosonization and path integral methods, we study general low temperature behavior of non-magnetic and magnetic impurity scattering in Tomonaga-Luttinger liquid, and calculate electron Green function for a general backward scattering…
Studies of different experimental groups that explore the properties of a two-dimensional electron gas in silicon semiconductor systems ((100) Si metal-oxide-semiconductor field-effect transistors (MOSFETs) and (100) SiGe/Si/SiGe quantum…
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor…
We calculate the electronic wave-function for a phosphorus donor in silicon by numerical diagonalisation of the donor Hamiltonian in the basis of the pure crystal Bloch functions. The Hamiltonian is calculated at discrete points localised…
Exact diagonalization studies of the level density in a six-electron quantum dot under magnetic fields around 7 T (``filling factor'' around 1/2) are reported. In any spin-polarization channel, two regimes are visible in the dot excitation…