Related papers: Donor type semiconductor at low temperature as mas…
We report the creation of an ultracold neutral plasma by photoionization of laser-cooled xenon atoms. The charge carrier density is as high as 2 x 10^9 cm^-3, and the temperatures of electrons and ions are as low as 100 mK and 10 uK,…
The peculiarities of electric current are studied occurring in semiconductors with strongly nonuniform distribution of charge carriers. The formation of such nonuniformities and the regulation of carrier mobilities can be realized by means…
Ultracold neutral plasmas are formed by photoionizing laser-cooled atoms near the ionization threshold. Through the application of atomic physics techniques and diagnostics, these experiments stretch the boundaries of traditional neutral…
Restoring force acts on the electronic cloud of the outer electrons of a neutral or charged impurity atom when it is shifted relative to the inner charged core. Because of this the dipole oscillation arises, which influences considerably…
We present a new scheme for rotations of a charge qubit associated with a singly ionized pair of donor atoms in a semiconductor host. The logical states of such a qubit proposed recently by Hollenberg et al. are defined by the lowest two…
We study the model of a d-wave superconductor interacting with finite concentration of Anderson impurities at zero temperature. The interaction between impurity and conduction electrons is taken into account within the large-$N$…
The control over material properties attainable through molecular doping is essential to many technological applications of organic semiconductors, such as OLED or thermoelectrics. These excitonic semiconductors typically reach the…
A model of interstitial impurity migration is proposed which explains the redistribution of ion-implanted boron in low-temperature annealing of nonamorphized silicon layers. It is supposed that nonequilibrium boron interstitials are…
We present a theoretical model of an on-chip three-level maser in a superconducting circuit based on a single artificial atom and pumped by a temperature gradient between thermal baths coupled to different interlevel transitions. We show…
Using particle-in-cell simulation technique, we investigate the plasma and ionization asymmetry, electron and ion energy distribution function in capacitive discharges excited by tailored waveforms. At a base frequency of 13.56 MHz, three…
Recent advances in the characterization of hexagonal-diamond silicon (2H-Si) have shown that this material possesses remarkably different structural, electronic, and optical properties as compared to the common cubic-diamond (3C) polytype.…
Dark matter with mass below about a GeV is essentially unobservable in conventional direct detection experiments. However, newly proposed technology will allow the detection of single electron events in semiconductor materials with…
Analogous to the extension of laser cooling techniques from two-level to three-level atoms, Doppler cooling of molecules with an intermediate electronic state is considered. In particular, we use a rate-equation approach to simulate cooling…
Neutral atoms can be trapped and manipulated with surface mounted microscopic current carrying and charged structures. We present a lithographic fabrication process for such atom chips based on evaporated metal films. The size limit of this…
Positive and negative streamers are studied in ambient air at 1 bar; they emerge from a needle electrode placed 40 mm above a planar electrode. The amplitudes of the applied voltage pulses range from 5 to 96 kV; most pulses have rise times…
We present a detailed study, within the mean-field approximation, of an impurity band model for III-V diluted magnetic semiconductors. Such a model should be relevant at low carrier densities, below and near the metal-insulator transition.…
Dopant atoms in semiconductors can be ionized with $\sim10$ meV energy depositions, allowing for the design of low-threshold detectors. We propose using doped semiconductor targets to search for sub-MeV dark matter scattering or sub-eV dark…
Warm dense matter is difficult to generate since it corresponds to a state of matter which pressure is order of magnitude larger than can be handled by natural materials. A diamond anvil can be used to pressurize matter up to one Gbar, this…
We show that the negative electronic compressibility of two-dimensional electronic systems at sufficiently low density enables the generation of charge density waves through the application of a uniform force field, provided no current is…
As the variation of temperature alters the intrinsic carrier density in a semiconductor, numerical simulations indicate that the consequent variation of the relative permittivity in the terahertz regime provides a way to realize thermally…