English

Prospects for Doppler cooling of three-electronic-level molecules

Atomic Physics 2015-03-17 v4

Abstract

Analogous to the extension of laser cooling techniques from two-level to three-level atoms, Doppler cooling of molecules with an intermediate electronic state is considered. In particular, we use a rate-equation approach to simulate cooling of SiO+, in which population buildup in the intermediate state is prevented by its short lifetime. We determine that Doppler cooling of SiO+ can be accomplished without optically repumping from the intermediate state, at the cost of causing undesirable parity flips and rotational diffusion. Since the necessary repumping would require a large number of continuous-wave lasers, optical pulse shaping of a femtosecond laser is proposed as an attractive alternative. Other candidate three-electron-level molecules are also discussed.

Keywords

Cite

@article{arxiv.1012.3696,
  title  = {Prospects for Doppler cooling of three-electronic-level molecules},
  author = {J. H. V. Nguyen and B. Odom},
  journal= {arXiv preprint arXiv:1012.3696},
  year   = {2015}
}

Comments

7 pages, 7 figures

R2 v1 2026-06-21T16:59:57.405Z