English

Zn vacancy-donor impurity complexes in ZnO

Materials Science 2018-04-04 v1

Abstract

Results from hybrid density functional theory calculations on the thermodynamic stability and optical properties of the Zn vacancy (VZnV_{\text{Zn}}) complexed with common donor impurities in ZnO are reported. Complexing VZnV_{\text{Zn}} with donors successively removes its charge-state transition levels in the band gap, starting from the most negative one. Interestingly, the presence of a donor leads only to modest shifts in the positions of the VZnV_{\text{Zn}} charge-state transition levels, the sign and magnitude of which can be interpreted from a polaron energetics model by taking hole-donor repulsion into account. By employing a one-dimensional configuration coordinate model, luminescence lineshapes and positions were calculated. Due to the aforementioned effects, the isolated VZnV_{\text{Zn}} gradually changes from a mainly non-radiative defect with transitions in the infrared region in \textit{n}-type material, to a radiative one with broad emission in the visible range when complexed with shallow donors.

Keywords

Cite

@article{arxiv.1804.00919,
  title  = {Zn vacancy-donor impurity complexes in ZnO},
  author = {Y. K. Frodason and K. M. Johansen and T. S. Bjørheim and B. G. Svensson and A. Alkauskas},
  journal= {arXiv preprint arXiv:1804.00919},
  year   = {2018}
}

Comments

9 pages, 5 figures

R2 v1 2026-06-23T01:12:33.475Z