Implantation and diffusion of Zn dopant into bulk InP:S were performed. Zn concentration profiles were investigated by secondary ion mass spectrometry and capacitance-voltage method. We find that thermodynamic conditions of annealing influence diffusion mechanism of Zn atoms. Excess phosphorus vacancies generation causes diffusion of Zn dopant by the complex [V_{P}-Zn_{In}-V_{P}] producing characteristic diffusion profile with the sharp slope. Such electrically inactive Zn configuration cause lower diffusion coefficient than that in the generally known interstitial-substitutional mechanism.
Cite
@article{arxiv.1708.04852,
title = {Complex diffusion mechanism of Zn in InP},
author = {Rafal Jakiela},
journal= {arXiv preprint arXiv:1708.04852},
year = {2017}
}