Two types of adjacent dimer layers in the low temperature phase of BaCuSi2O6

D. V. Sheptyakov; V. Yu. Pomjakushin; R. Stern; I. Heinmaa; H. Nakamura; T. Kimura

doi:10.1103/PhysRevB.86.014433

Two types of adjacent dimer layers in the low temperature phase of BaCuSi2O6

Strongly Correlated Electrons 2012-08-23 v1

Authors: D. V. Sheptyakov , V. Yu. Pomjakushin , R. Stern , I. Heinmaa , H. Nakamura , T. Kimura

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Abstract

The low-temperature crystal structure of BaCuSi2O6 has been investigated with high-resolution synchrotron x-ray and neutron powder diffraction techniques and has been found to be on average (ignoring the incommensurate modulation) orthorhombic, with the most probable space group Ibam. The Cu-Cu dimers in this material are forming two types of layers with distinctly different interatomic distances. Subtle changes also modify the partially frustrated interlayer Cu-Cu exchange paths. The present results corroborate the interpretation of low-temperature nuclear magnetic resonance and inelastic neutron scattering data in terms of distinct dimer layers.

Keywords

BaCuSi2O6 dimer layers crystal structure synchrotron x-ray diffraction interlayer exchange

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@article{arxiv.1208.4499,
  title  = {Two types of adjacent dimer layers in the low temperature phase of BaCuSi2O6},
  author = {D. V. Sheptyakov and V. Yu. Pomjakushin and R. Stern and I. Heinmaa and H. Nakamura and T. Kimura},
  journal= {arXiv preprint arXiv:1208.4499},
  year   = {2012}
}

Two types of adjacent dimer layers in the low temperature phase of BaCuSi2O6

Abstract

Keywords

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