English

Time-evolution of the GaAs(0 0 1) pre-roughening process

Mesoscale and Nanoscale Physics 2015-06-24 v1 Materials Science
Authors: Z. Ding , D. W. Bullock , P. M. Thibado , V. P. LaBella , K. Mullen
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Abstract

The GaAs(0 0 1) surface is observed to evolve from being perfectly flat to a surface half covered with one-monolayer high spontaneously formed GaAs islands. The dynamics of this process are monitored with atomic-scale resolution using scanning tunneling microscopy. Surprisingly, pit formation dominates the early stages of island formation. Insight into the nucleation process is reported.

Keywords

GaAs(0 0 1) surface pre-roughening scanning tunneling microscopy island formation pit formation nucleation surface evolution

Cite

@article{arxiv.1503.03809,
  title  = {Time-evolution of the GaAs(0 0 1) pre-roughening process},
  author = {Z. Ding and D. W. Bullock and P. M. Thibado and V. P. LaBella and K. Mullen},
  journal= {arXiv preprint arXiv:1503.03809},
  year   = {2015}
}

Comments

8 pages, 4 figures

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