Theory and computation of Hall scattering factor in graphene
Abstract
The Hall scattering factor, , is a key quantity for establishing carrier concentration and drift mobility from Hall measurements; in experiments it is usually assumed to be 1. In this paper we use a combination of analytical and \textit{ab initio} modelling to determine in graphene. While at high carrier densities in a wide temperature range, at low doping the temperature dependence of is very strong with values as high as 4 below 300~K. These high values are due to the linear bands around the Dirac cone and the carrier scattering rates due to acoustic phonons. At higher temperatures can instead become as low as due to the contribution of both holes and electrons and the role of optical phonons. Finally, we provide a simple analytical model to compute accurately in graphene in a wide range of temperatures and carrier densities.
Keywords
Cite
@article{arxiv.2111.10774,
title = {Theory and computation of Hall scattering factor in graphene},
author = {Francesco Macheda and Samuel Poncé and Feliciano Giustino and Nicola Bonini},
journal= {arXiv preprint arXiv:2111.10774},
year = {2021}
}