The difference between Si and Ge(001) surfaces in the initial stages of growth

G. Brocks; J. H. Snoeijer; P. J. Kelly; H. J. W. Zandvliet; Bene Poelsema

The difference between Si and Ge(001) surfaces in the initial stages of growth

Materials Science 2007-05-23 v1

Authors: G. Brocks , J. H. Snoeijer , P. J. Kelly , H. J. W. Zandvliet , Bene Poelsema

Abstract

The initial stages of growth of Ge and Si on the Ge(001) surface are studied and compared to growth on the Si(001) surface. Metastable rows of diluted ad-dimers exist on both surfaces as intermediate stages of epitaxial growth. Unexpectedly, for Ge(001) these rows are found exclusively in the <310> directions, whereas on Si(001) the preferred direction is <110>. This qualitative difference between Si and Ge surfaces reflects the subtle difference in the chemistry of these two elements, which has direct consequences for epitaxial growth on these surfaces.

Keywords

epitaxial growth silicon germanium ad-dimers crystallographic directions

Cite

@article{arxiv.cond-mat/0205600,
  title  = {The difference between Si and Ge(001) surfaces in the initial stages of growth},
  author = {G. Brocks and J. H. Snoeijer and P. J. Kelly and H. J. W. Zandvliet and Bene Poelsema},
  journal= {arXiv preprint arXiv:cond-mat/0205600},
  year   = {2007}
}

Comments

4 pages, 3 figures

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