Terahertz Kerr and Reflectivity Measurements on the Topological Insulator Bi2Se3

G. S. Jenkins; A. B. Sushkov; D. C. Schmadel; N. P. Butch; P. Syers; J. Paglione; H. D. Drew

doi:10.1103/PhysRevB.82.125120

Terahertz Kerr and Reflectivity Measurements on the Topological Insulator Bi2Se3

Strongly Correlated Electrons 2010-09-29 v2 Materials Science

Authors: G. S. Jenkins , A. B. Sushkov , D. C. Schmadel , N. P. Butch , P. Syers , J. Paglione , H. D. Drew

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Abstract

We report the first terahertz Kerr measurements on bulk crystals of the topological insulator Bi2Se3. At T=10K and fields up to 8T, the real and imaginary Kerr angle and reflectance measurements utilizing both linearly and circularly polarized incident radiation were measured at a frequency of 5.24meV. A single fluid free carrier bulk response can not describe the line-shape. Surface states with a small mass and surprisingly large associated spectral weight quantitatively fit all data. However, carrier concentration inhomogeneity has not been ruled out. A method employing a gate is shown to be promising for separating surface from bulk effects.

Keywords

terahertz Kerr effect topological insulator Bi2Se3 surface states reflectance magneto-optical measurement

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@article{arxiv.1007.4482,
  title  = {Terahertz Kerr and Reflectivity Measurements on the Topological Insulator Bi2Se3},
  author = {G. S. Jenkins and A. B. Sushkov and D. C. Schmadel and N. P. Butch and P. Syers and J. Paglione and H. D. Drew},
  journal= {arXiv preprint arXiv:1007.4482},
  year   = {2010}
}

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10 pages, 5 figures

Terahertz Kerr and Reflectivity Measurements on the Topological Insulator Bi2Se3

Abstract

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