We have synthesized single-layer graphene on Cu foils using chemical vapor deposition method and transferred the graphene to the top of a Si/SiO2 substrate with a pair of prefabricated Ti/Au electrodes. A resistive graphene-based gas sensor prepared in this way revealed n-type oxygen response at room temperature and we have successfully fitted the data obtained with varying oxygen levels using a two-site Langmuir model. P-type oxygen response of our sensor was observed after the temperature was raised to 100 oC, with a reversible transition to n-type behaviour when the temperature was lowered back to room temperature. Such inversion of the gas response type with temperature was interpreted as a result of interplay between the adsorbate-induced charge transfer and charge carrier scattering. The transduction function was derived, which relates the electrical response to surface coverage through both the induced mobility and charge density changes.
@article{arxiv.1310.0215,
title = {Temperature induced inversion of oxygen response in CVD graphene on SiO2},
author = {Raivo Jaaniso and Tauno Kahro and Jekaterina Kozlova and Jaan Aarik and Lauri Aarik and Harry Alles and Aare Floren and Alar Gerst and Aarne Kasikov and Ahti Niilisk and Väino Sammelselg},
journal= {arXiv preprint arXiv:1310.0215},
year = {2013}
}
Comments
8 figures, in press, accepted manuscript. Sensors and Actuators B: Chemical (2013)