We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 GΩ at room temperature. Electron transport in graphene fluoride is well described by variable-range hopping in two dimensions due to the presence of localized states in the band gap. Graphene obtained through the reduction of graphene fluoride is highly conductive, exhibiting a resistivity of less than 100 kΩ at room temperature. Our approach provides a new path to reversibly engineer the band structure and conductivity of graphene for electronic and optical applications.
@article{arxiv.1005.0113,
title = {Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor},
author = {S. -H. Cheng and K. Zou and F. Okino and H. R. Gutierrez and A. Gupta and N. Shen and P. C. Eklund and J. O. Sofo and J. Zhu},
journal= {arXiv preprint arXiv:1005.0113},
year = {2015}
}