Using first-principles calculations, we explore the possibility of functionalized graphene as high performance two-dimensional spintronics device. Graphene functionalized with O on one side and H on the other side in the chair conformation is found to be a ferromagnetic metal with a spin-filter efficiency up to 85% at finite bias. The ground state of graphene semi-functionalized with F in the chair conformation is an antiferromagnetic semiconductor, and we construct a magnetoresistive device from it by introducing a magnetic field to stabilize its ferromagnetic metallic state. The resulting room-temperature magnetoresistance is up to 5400%, which is one order of magnitude larger than the available experimental values.
@article{arxiv.1011.6014,
title = {Functionalized Graphene for High Performance Two-dimensional Spintronics Devices},
author = {Linze Li and Rui Qin and Hong Li and Lili Yu and Qihang Liu and Guangfu Luo and Jing Lu and Zhengxiang Gao},
journal= {arXiv preprint arXiv:1011.6014},
year = {2010}
}