Suppressing carrier density in (BixSb1-x)2Te3 films using Cr2O3 interfacial layers

Xiong Yao; Hee Taek Yi; Deepti Jain; Seongshik Oh

doi:10.1088/1361-6463/ac28bc

Suppressing carrier density in (BixSb1-x)2Te3 films using Cr2O3 interfacial layers

Materials Science 2021-10-27 v1

Authors: Xiong Yao , Hee Taek Yi , Deepti Jain , Seongshik Oh

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Abstract

Band structure engineering and interfacial buffer layers have been demonstrated as effective means to tune the Fermi level in topological insulators (TI). In particular, the charge compensated compound (BixSb1-x)2Te3 (BST) plays a critical role in the molecular beam epitaxy growth of magnetic TIs. Here we introduce a strategy of exploiting epitaxial Cr2O3 as a buffer layer and amorphous Cr2O3 as a capping layer in the growth of BST films. These films exhibit carrier density lower than 1012/cm2 over a wide range of Bi contents and higher mobility than BST films directly grown on Al2O3 substrate, shedding light on the importance of interfacial layers for TI films and paving a new avenue to the application of magnetic BST films.

Keywords

topological insulator (BixSb1-x)2Te3 Cr2O3 interfacial layer carrier density mobility molecular beam epitaxy magnetic thin film

Cite

@article{arxiv.2109.10176,
  title  = {Suppressing carrier density in (BixSb1-x)2Te3 films using Cr2O3 interfacial layers},
  author = {Xiong Yao and Hee Taek Yi and Deepti Jain and Seongshik Oh},
  journal= {arXiv preprint arXiv:2109.10176},
  year   = {2021}
}

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5 pages, 3 figures, Invited article to a Special issue in Journal of Physics D: Applied Physics

Suppressing carrier density in (BixSb1-x)2Te3 films using Cr2O3 interfacial layers

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