Straining Graphene by Chemical Vapour Deposition Growth on Copper

Victor Yu; Eric Whiteway; Jesse Maassen; Michael Hilke

doi:10.1103/PhysRevB.84.205407

Straining Graphene by Chemical Vapour Deposition Growth on Copper

Materials Science 2015-03-17 v1

Authors: Victor Yu , Eric Whiteway , Jesse Maassen , Michael Hilke

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Abstract

Strain can be used as an alternate way to tune the electronic properties of graphene. Here we demonstrate that it is possible to tune the uniform strain of graphene simply by changing the chemical vapor deposition growth temperature of graphene on copper. Due to the cooling of the graphene on copper system, we can induce a uniform compressive strain on graphene. The strain is analyzed by Raman spectroscopy, where a shift in the 2D peak is observed and compared to our ab initio calculations of the graphene on copper system as a function of strain.

Keywords

graphene chemical vapor deposition strain engineering Raman spectroscopy ab initio calculations copper substrate

Cite

@article{arxiv.1101.1884,
  title  = {Straining Graphene by Chemical Vapour Deposition Growth on Copper},
  author = {Victor Yu and Eric Whiteway and Jesse Maassen and Michael Hilke},
  journal= {arXiv preprint arXiv:1101.1884},
  year   = {2015}
}

Comments

5 pages, 5 figures

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