Suppression of Multilayer Graphene Patches during CVD Graphene growth on Copper

Zheng Han; Amina Kimouche; Adrien Allain; Hadi Arjmandi-Tash; Antoine Reserbat-Plantey; Sébastien Pairis; Valérie Reita; Nedjma Bendiab; Johann Coraux; Vincent Bouchiat

doi:10.1002/adfm.201301732

Suppression of Multilayer Graphene Patches during CVD Graphene growth on Copper

Mesoscale and Nanoscale Physics 2014-02-11 v1 Materials Science

Authors: Zheng Han , Amina Kimouche , Adrien Allain , Hadi Arjmandi-Tash , Antoine Reserbat-Plantey , Sébastien Pairis , Valérie Reita , Nedjma Bendiab , Johann Coraux , Vincent Bouchiat

View on arXiv ↗ PDF ↗ DOI ↗

Abstract

By limiting the carbon segregation at the copper surface defects, a pulsed chemical vapor deposition method for single layer graphene growth is shown to inhibit the formation of few-layer regions, leading to a fully single-layered graphene homogeneous at the centimeter scale. Graphene field-effect devices obtained after transfer of pulsed grown graphene on oxidized silicon exhibit mobilities above 5000 cm^2.V^-1.s^-1.

Keywords

CVD graphene multilayer graphene carbon segregation field-effect devices copper surface

Cite

@article{arxiv.1205.1337,
  title  = {Suppression of Multilayer Graphene Patches during CVD Graphene growth on Copper},
  author = {Zheng Han and Amina Kimouche and Adrien Allain and Hadi Arjmandi-Tash and Antoine Reserbat-Plantey and Sébastien Pairis and Valérie Reita and Nedjma Bendiab and Johann Coraux and Vincent Bouchiat},
  journal= {arXiv preprint arXiv:1205.1337},
  year   = {2014}
}

Comments

4 pages, 3 figures

Suppression of Multilayer Graphene Patches during CVD Graphene growth on Copper

Abstract

Keywords

Cite

Comments

Related papers