Low temperature photoluminescence and photoluminescence excitation measurements have been performed in a set of InGaAs/GaAs samples with different indium molar fraction, well width, growth conditions and post-growth treatment. This has allowed to change in a controlled way the degree and source of disorder in the samples, thus resulting in an excitonic absorption linewidth varying between 1 and 18 meV, and an ensueing Stokes shift changing between zero and 8 meV. The conditions of validity of two different models relating the Stokes shift to the linewidth broadening have been established in terms of different regimes of disorder and temperature. A continuous transition between those regimes has been demonstrated.
@article{arxiv.cond-mat/9609160,
title = {Stokes shift in quantum wells: trapping versus thermalization},
author = {A. Polimeni and A. Patanè and M. Grassi Alessi and M. Capizzi and F. Martelli and A. Bosacchi and S. Franchi},
journal= {arXiv preprint arXiv:cond-mat/9609160},
year = {2009}
}
Comments
File apstex, 12 p. + 4 Figures, to appear on Phys. Rev. B (Brief Reports.), 15 Dec. 1996. The figures will be faxed upon request. E-mail:capizzi@roma1.infn.it Fax: +39-6-4957697