Related papers: Stokes shift in quantum wells: trapping versus the…
The interpretation of electromodulated reflectance (ER) spectra of polar quantum wells (QWs) is difficult even for homogeneous structures because of the built-in electric field. In this work we compare the room-temperature contactless ER…
The effect of alloy disorder on the optical density of states and the average room temperature carrier statistics in GaInNAs quantum wells is discussed. A red shift between the peak of the room temperature photoluminescence and the surface…
Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the…
Photoluminescence (PL) and reflectivity spectra of a high-quality InGaAs/GaAs quantum well structure reveal a series of ultra-narrow peaks attributed to the quantum confined exciton states. The intensity of these peaks decreases as a…
Localization dynamics of excitons was studied for ZnO/MgZnO and CdZnO/MgZnO quantum wells (QW). The experimental photoluminescence (PL) and absorption data were compared with the results of Monte Carlo simulation in which the excitonic…
The operation of quantum dots at highest possible temperatures is desirable for many applications. Capacitance-voltage spectroscopy (C(V)-spectroscopy) measurements are an established instrument to analyze the electronic structure and…
In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied…
Our magnetotransport measurements of quantum Hall stripes in a high-quality GaAs quantum well in a slightly tilted magnetic field reveal that the orientation of stripes can be changed by temperature. Field-cooling and field-warming…
The temperature-dependent linewidths of excitons in ZnO quantum wells were studied by measuring absorption spectra from 5 K to room temperature. We deduced experimentally the exciton-longitudinal-optical (LO) phonon coupling strength, which…
We investigate the dependence of the low-temperature photoluminescence linewidths from InP-lattice-matched InGaAs/InAlAs quantum wells on the low-angle misorientation from the (100) surface of the host InP substrate. Quantum wells were…
The photocurrent and the small-signal photoconductance of InGaN/GaN multiple-quantum-well structures were studied at the temperature range from 10 to 300 K. The optical excitation was carried out at the quantum wells intrinsic absorption…
We observe high-mobility transport of indirect excitons in coupled GaAs quantum wells. A voltage-tunable in-plane potential gradient is defined for excitons by exploiting the quantum confined Stark effect in combination with a…
We investigate the dependence of QSO Lyman-alpha absorption features on the temperature of the absorbing gas and on the amplitude of the underlying dark matter fluctuations. We use high-resolution hydrodynamic simulations in cold dark…
Indirect excitons in coupled quantum wells have long radiative lifetimes and form a cold quasi-two-dimensional population suitable for studying collective quantum effects. Here we report the observation of the exciton Mott transition from…
We report on time-resolved and steady-state photoluminescence studies of GaAs/AlGaAs V-groove quantum wire structures. Steady-state photoluminescence experiments are performed in the temperature range from 8K to 200K. We evaluate the…
We study the exciton gas-liquid transition in GaAs/AlGaAs coupled quantum wells. Below a critical temperature, Tc=4.8K, and above a threshold laser power density the system undergoes a phase transition into a liquid state. We determine the…
We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by…
We consider an electron-hole system in double quantum wells theoretically. We demonstrate that there is a temperature interval over which an abrupt jump in the value of the ionization degree occurs with an increase of the carrier density or…
Quasi-two dimensional electron systems exhibit peculiar transport effects depending on their density profiles and temperature. A usual two dimensional electron system is assumed to have a $\delta$ like density distribution along the crystal…
We demonstrate THz intersubband absorption (15.6-26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift…