Related papers: Stokes shift in quantum wells: trapping versus the…
Characteristics of GaAs/In$_{x}$Ga$_{1-x}$As/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence…
We demonstrate that intersubband (ISB) polaritons are robust to inhomogeneous effects originating from the presence of multiple quantum wells (MQWs). In a series of samples that exhibit mid-infrared ISB absorption transitions with…
We observed room-temperature intersubband transitions at 1.26 microns in n-doped type-II In$_{0.3}$Ga$_{0.7}$As/AlAs strained quantum wells. An improved tight-binding model was used to optimize the structure parameters in order to obtain…
We explore the midinfrared absorption of strain-compensated p-Si0.2Ge0.8/Si quantum wells for various well thicknesses and temperatures. Owing to the large band offset due to the large bi-axial strain contrast between the wells and…
Nanocrystals of AgInS$_2$ demonstrate giant Stokes shifts ~ 1 eV, the nature of which is still not clearly understood. We propose a theoretical model of this phenomenon bringing together several different mechanisms previously considered…
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…
We report the first terahertz study of the intra-excitonic 1s-2p transition at high excitation densities in GaAs/AlGaAs quantum wells. A strong shift, broadening, and ultimately the disappearance of this resonance occurs with increasing…
Newly measured optical absorption and photoluminescence spectra reveal substantial frequency shifts of both exciton and trion peaks as monolayer MoS2 is cooled from 363 K to 4 K. First-principles simulations using the GW-Bethe-Salpeter…
The growth-diection quantization of confined electron gas in a GaAs/AlGaAs based quantum well structure is obtained in the Kohn-Sham iterative computational scheme. The longitudinal conductance at low temperatures, in the presence of…
The photoluminescence dynamics of a microscopic gas of indirect excitons trapped in coupled quantum wells is probed at very low bath temperature (approximately 350 mK). Our experiments reveal the non linear energy relaxation characteristics…
Inhomogeneous ensembles of quantum dots (QDs) coupled to a charge reservoir are widely studied by using, e.g., electrical methods like capacitance-voltage spectroscopy. We present experimental measurements of the QD capacitance as a…
Quantitative thermodynamical, dynamical and magnetic properties of the solar and stellar plasmas are obtained by interpreting their emergent non-polarized and polarized spectrum. This inference requires the selection of a set of spectral…
Fluid and solute transfer in X-junctions between straight channels is shown to depend critically on the junction angle in the Stokes flow regime. Experimentally, water and a water-dye solution are injected at equal flow rates in two facing…
The photoluminescence (PL) and absorption experiments have been performed in GaSe slab with incident light polarized perpendicular to c-axis of sample at 10K. An obvious energy difference of about 34meV between exciton absorption peak and…
A quiet Sun magnetic flux cancelation event at the disk centre was recorded using the Integral Field Unit (IFU) mounted on the GREGOR Infrared Spectrograph (GRIS). GRIS sampled the event in the photospheric Si I 10827 {\AA} spectral line.…
Single semiconductor quantum dots have been widely studied within devices that can apply an electric field. In the most common system, the low energy offset between the InGaAs quantum dot and the surrounding GaAs material limits the…
A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated electronic band structure model are used to ensure accurate…
Our experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically. Comparison…
A series of (Ga,In)As/GaAs/Ga(As,Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed…
By selective doping (Be) of the well and barrier regions of p-GaAs/AlGaAs structures we have realized the situation where the upper Hubbard band (A+ centers) has been occupied by holes in the equilibrium. We studied temperature behavior of…