English

Single Crystal Growth of Skutterudite CoP3 under High Pressure

Strongly Correlated Electrons 2009-11-10 v1
Authors: C. H. Lee , H. Kito , H. Ihara , K. Akita , N. Yanase , C. Sekine , I. Shirotani
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Abstract

A new method to grow single crystals of skutterudite compounds is examined. Using a wedge-type, cubic-anvil, high-pressure apparatus, single crystals of CoP3 were grown from stoichiometric melts under a pressure of 3.5 GPa. Powder x-ray diffraction and electron probe microanalysis measurements indicate that the as-grown boules are a single phase of CoP3. The results suggest that CoP3 is a congruent melting compound under high pressure.

Keywords

skutterudite CoP3 high pressure single crystal growth cubic-anvil apparatus

Cite

@article{arxiv.cond-mat/0312059,
  title  = {Single Crystal Growth of Skutterudite CoP3 under High Pressure},
  author = {C. H. Lee and H. Kito and H. Ihara and K. Akita and N. Yanase and C. Sekine and I. Shirotani},
  journal= {arXiv preprint arXiv:cond-mat/0312059},
  year   = {2009}
}

Comments

6pages,5 figures, J. Crystal Growth (in press)

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