For the first time Lu2S3 (undoped and Pr-doped) single crystals were successfully grown from melt using micro-pulling-down (mPD) technique. Customization of halide mPD apparatus allowed us to grow rod-shaped (\O 2 mm and length around 20 mm) crystals of Lu2S3 with high melting temperature (~1750 ∘C). X-ray powder diffraction revealed that the grown crystals exhibit the {\epsilon}-Lu2S3 crystal structure (α-Al2O3 type, space group R-3c). Optical and scintillation properties of both the undoped and Pr3+ doped Lu2S3 were investigated. Fast 5d-4f Pr3+ luminescence was observed in both photoluminescence and radioluminescence spectra. The presented technology is an effective tool for the exploration of a large family of high-melting sulfides. Such materials show promise for application as scintillators, active laser media, and optoelectronic components.
@article{arxiv.2409.10818,
title = {Growth and Spectroscopic Properties of Pr$^{3+}$ Doped Lu$_2$S$_3$ SingleCrystals},
author = {Vojtech Vanecek and Vitezslav Jary and Robert Kral and Lubomir Havlak and Ales Vlk and Romana Kucerkova and Petr Prusa and Jan Barta and Martin Nikl},
journal= {arXiv preprint arXiv:2409.10818},
year = {2024}
}