High-temperature indium flux growth was applied to prepare single crystals of GdRh2Si2 by a modified Bridgman method leading to mm-sized single crystals with a platelet habitus. Specific heat and susceptibility data of GdRh2Si2 exhibit a pronounced anomaly at TN=107K, where the AFM ordering sets in. Magnetic measurements on the single crystals were performed down to T=2\,K in external fields from B = 0 - 9\,T applied along the [100]-, [110]- and [001]-direction of the tetragonal lattice. The effective magnetic moment determined from a Curie-Weiss fit agrees well with values from literature, and is larger than the theoretically predicted value. Electrical transport data recorded for current flow parallel and perpendicular to the [001]-direction show a large anisotropy below TN. The residual resistivity ratio RRR=ρ300K/ρ0∼23 demonstrates that we succeeded in preparing high-quality crystals using high-temperature indium flux-growth.
@article{arxiv.1612.00781,
title = {Single crystal growth and characterization of GdRh$_2$Si$_2$},
author = {Kristin Kliemt and Cornelius Krellner},
journal= {arXiv preprint arXiv:1612.00781},
year = {2016}
}