Telegraphic noise is one of the most significant problems that arises when making sensitive measurements with lateral electrostatic devices. In this paper we demonstrate that a wafer which had only produced devices with significant telegraph noise problems can be made to produce 'quiet' devices if a thin insulator layer is placed between the gates and the GaAs/AlGaAs heterostructure. A slow drift in the resulting devices is attributed to the trapping of charges within the specific insulator used. This charge can be manipulated, leading to strategies for stabilizing the device.
@article{arxiv.0907.2903,
title = {Silencing noisy 2DEG wafers},
author = {L. Gaudreau and A. Kam and P. Zawadzki and G. Granger and S. Studenikin and J. Kycia and J. Mason and A. S. Sachrajda},
journal= {arXiv preprint arXiv:0907.2903},
year = {2009}
}
Comments
3 pages, 5 figures Submitted to EP2DS 2009 Conf. Proceedings