Related papers: Silencing noisy 2DEG wafers
We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance…
We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs/AlGaAs devices. Via a 2-D self-consistent simulation of the conduction band profile we show that this…
Optoelectronic oscillators have dominated the scene of microwave oscillators in the last few years thanks to their great performances regarding frequency stability and phase noise. However, miniaturization of such a device is an up to date…
We present a systematic characterization of fluctuations in submicron Hall devices based on GaAs/AlGaAs two-dimensional electron gas heterostructures at temperatures between 1.5 K to 60 K. A large variety of noise spectra, from 1/f to…
We report results of investigation of the low-frequency excess noise in device channels made from topological insulators - a new class of materials with a bulk insulating gap and conducting surface states. The thin-film bismuth selenide…
Single-layer Graphene (SLG) is a promising material for sensing applications. High performance graphene sensors can be achieved when Interdigitated Electrodes (IDE) are used. In this research work, we fabricated SLG micro-ribbon (GMR)…
Over the last decade, progress in wide bandgap, III-V materials systems based on gallium nitride (GaN) has been a major driver in the realization of high power and high frequency electronic devices. Since the highly conductive,…
We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to…
Tiny vibrations of mechanical structures are the main limiting cause in a number of high sensitivity measurement apparatus, chief among them the most sensitive displacement apparatus on earth: gravitational wave interferometers. Such…
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the…
We study low-frequency noise in current passing through quantum point contacts fabricated from several GaAs/AlGaAs heterostructures with different layer structures and fabrication processes. In contrast to previous reports, there is no…
Noise within solid-state systems at low temperatures, where many of the degrees of freedom of the host material are frozen out, can typically be traced back to material defects that support low-energy excitations. These defects can take a…
The interaction between the telegraph noise and background voltage fluctuations in the current induced dissipative state of high-Tc BiSrCaCuO thin films has been investigated. Experimental time records of the voltage drop across current…
We present a thin subwavelength material that can be flush mounted to a duct and which gives a large wide band attenuation at remarkably low frequencies in air flow channels. To decrease the material thickness, the sound is slowed in the…
We consider the propagation of acoustic waves in a 2D waveguide unbounded in one direction and containing a compact obstacle. The wavenumber is fixed so that only one mode can propagate. The goal of this work is to propose a method to cloak…
We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point…
Electrostatic gating is essential for defining and control of semiconducting devices. However, nano-fabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of…
Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the…
In order to achieve low Noise-Equivalent-Powers (NEP < 1 aW Hz$^{-1/2}$) Transition Edge Sensors (TES) require high levels of thermal isolation between the superconducting bilayer and the heat bath. We propose that short micro-machined…
We report results of experimental investigation of the low-frequency noise in the top-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by 20 nm of HfO2 from the single-layer…