Scanning tunneling microscopy with InAs nanowire tips

Kilian Flöhr; Kamil Sladek; H. Yusuf Günel; Mihail Ion Lepsa; Hilde Hardtdegen; Marcus Liebmann; Thomas Schäpers; Markus Morgenstern

doi:10.1063/1.4769450

Scanning tunneling microscopy with InAs nanowire tips

Mesoscale and Nanoscale Physics 2012-12-21 v1

Authors: Kilian Flöhr , Kamil Sladek , H. Yusuf Günel , Mihail Ion Lepsa , Hilde Hardtdegen , Marcus Liebmann , Thomas Schäpers , Markus Morgenstern

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Abstract

Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with submicrometer precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z-noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.

Keywords

nanowire physics semiconductor nanowire growth

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@article{arxiv.1212.5143,
  title  = {Scanning tunneling microscopy with InAs nanowire tips},
  author = {Kilian Flöhr and Kamil Sladek and H. Yusuf Günel and Mihail Ion Lepsa and Hilde Hardtdegen and Marcus Liebmann and Thomas Schäpers and Markus Morgenstern},
  journal= {arXiv preprint arXiv:1212.5143},
  year   = {2012}
}

Scanning tunneling microscopy with InAs nanowire tips

Abstract

Keywords

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