English

Satellite Band Structure in Silicon Caused by Electron-Plasmon Coupling

Materials Science 2015-06-11 v1

Abstract

We report the first angle-resolved photoemission measurement of the wave-vector dependent plasmon satellite structure of a three-dimensional solid, crystalline silicon. In sharp contrast to nanomaterials, which typically exhibit strongly wave-vector dependent, low-energy plasmons, the large plasmon energy of silicon facilitates the search for a plasmaron state consisting of resonantly bound holes and plasmons and its distinction from a weakly interacting plasmon-hole pair. Employing a first-principles theory, which is based on a cumulant expansion of the one-electron Green's function and contains significant electron correlation effects, we obtain good agreement with the measured photoemission spectrum for the wave-vector dependent dispersion of the satellite feature, but without observing the existence of plasmarons in the calculations.

Keywords

Cite

@article{arxiv.1504.07794,
  title  = {Satellite Band Structure in Silicon Caused by Electron-Plasmon Coupling},
  author = {Johannes Lischner and G. K. Palsson and Derek Vigil-Fowler and S. Nemsak and J. Avila and M. C. Asensio and C. S. Fadley and S. G. Louie},
  journal= {arXiv preprint arXiv:1504.07794},
  year   = {2015}
}

Comments

7 pages, 5 figures, accepted for publication in PRB

R2 v1 2026-06-22T09:24:53.646Z