English

Revisiting the stable structure of the Cu$_{4}$ complex in silicon

Materials Science 2022-01-05 v4

Abstract

The photoluminescence (PL) spectrum of Cu-containing silicon has a sharp zero-phonon (ZP) band at 1.014 eV. The luminescence center corresponding to this band is called CuPL_{PL} and is known to have the local C3vC_{3v} symmetry. A recent measurement by ultrahigh-resolution PL spectroscopy revealed that the CuPL_{PL} center is a Cu4_{4} complex. Later, it was shown, by first-principles calculations, that the structure was Cu(s)_{(s)}Cu3(i)_{3(i)}, that is, a complex composed of three interstitial Cu(i)_{(i)} atoms around a substitutional Cu(s)_{(s)} atom. This complex (called CC-type) has the desired symmetry. However, in this study, we show that the lowest-energy structure is different. The tetrahedral structure Cu4_{4}, called TT-type, has the lowest energy, with the value being 0.26 eV lower than that of CC-type. Between these two types, there is an energy barrier of 0.14 eV, which allows CC-type to exist in a metastable state. Details of the electronic properties of the TT-type complex are given, by comparing with CC-type and other isovalent complexes such as Li4_{4}. Whereas the Cu4_{4} tetrahedron is incorporated in silicon in a manner compatible with the tetrahedral network, it also has its own molecular orbitals that exhibit metallic characteristics, in contrast to other complexes. The ZP of the PL spectrum is very likely ascribed to the backflow mode of the Cu4_{4} tetrahedron.

Keywords

Cite

@article{arxiv.1912.11586,
  title  = {Revisiting the stable structure of the Cu$_{4}$ complex in silicon},
  author = {Takayoshi Fujimura and Koun Shirai},
  journal= {arXiv preprint arXiv:1912.11586},
  year   = {2022}
}