English

Resonant tunneling and Fano resonance in quantum dots with electron-phonon interaction

Mesoscale and Nanoscale Physics 2009-11-11 v2

Abstract

We theoretically study the resonant tunneling and Fano resonance in quantum dots with electron-phonon (e-ph) interaction. We examine the bias-voltage (VV) dependence of the decoherence, using Keldysh Green function method and perturbation with respect to the e-ph interaction. With optical phonons of energy ω0\omega_0, only the elastic process takes place when eV<ω0eV<\omega_0, in which electrons emit and absorb phonons virtually. The process suppresses the resonant amplitude. When eV>ω0eV>\omega_0, the inelastic process is possible which is accompanied by real emission of phonons. It results in the dephasing and broadens the resonant width. The bias-voltage dependence of the decoherence cannot be obtained by the canonical transformation method to consider the e-ph interaction if its effect on the tunnel coupling is neglected. With acoustic phonons, the asymmetric shape of the Fano resonance grows like a symmetric one as the bias voltage increases, in qualitative accordance with experimental results.

Keywords

Cite

@article{arxiv.cond-mat/0601327,
  title  = {Resonant tunneling and Fano resonance in quantum dots with electron-phonon interaction},
  author = {Akiko Ueda and Mikio Eto},
  journal= {arXiv preprint arXiv:cond-mat/0601327},
  year   = {2009}
}

Comments

28 pages, 11 figures