Fano Resonances in Electronic Transport through a Single Electron Transistor
Mesoscale and Nanoscale Physics
2009-10-31 v2
Abstract
We have observed asymmetric Fano resonances in the conductance of a single electron transistor resulting from interference between a resonant and a nonresonant path through the system. The resonant component shows all the features typical of quantum dots, but the origin of the non-resonant path is unclear. A unique feature of this experimental system, compared to others that show Fano line shapes, is that changing the voltages on various gates allows one to alter the interference between the two paths.
Keywords
Cite
@article{arxiv.cond-mat/9912419,
title = {Fano Resonances in Electronic Transport through a Single Electron Transistor},
author = {J. Goeres and D. Goldhaber-Gordon and S. Heemeyer and M. A. Kastner and Hadas Shtrikman and D. Mahalu and U. Meirav},
journal= {arXiv preprint arXiv:cond-mat/9912419},
year = {2009}
}
Comments
8 pages, 6 figures. Submitted to PRB