We have numerically studied the behavior of one dimensional tunnel junction arrays when random background charges are included using the ``orthodox'' theory of single electron tunneling. Random background charge distributions are verified in both amplitude and density. The use of a uniform array as a transistor is discussed both with and without random background charges. An analytic expression for the gain near zero gate voltage in a uniform array with no background charges is derived. The gate modulation with background charges present is simulated.
@article{arxiv.cond-mat/0006395,
title = {Random background charges and Coulomb blockade in one-dimensional tunnel junction arrays},
author = {J. Johansson and D. B. Haviland},
journal= {arXiv preprint arXiv:cond-mat/0006395},
year = {2009}
}