As human activities expand into naturally or man-made radiation-prone environment, the need for radiation-hardened (Rad-Hard) electronic hardware surged. The state-of-the-art silicon-based and two-dimensional (2D) materials based Rad-Hard transistors can withstand up to 1 Mrad (Si) of total ionization dose (TID), while higher TID tolerance is being heatedly sought after. Here we present few-layer MoS2 Rad-Hard field-effect transistors (FETs) with polymer solid electrolyte (PSE) gate dielectrics. The MoS2 PSE-FETs exhibit a TID tolerance of up to 3.75 Mrad (Si) at a dose rate of 523 rad (Si) s−1 and can be repaired with a moderate thermal annealing at 100 ∘C for 5 minutes. Combining the excellent intrinsic radiation tolerance and the reparability, the MoS2 PSE-FETs reach a TID tolerance of up to 10 Mrad (Si). Complementary metal-oxide-semiconductor (CMOS)-like MoS2 PSE-inverters have been built and show similar high radiation tolerance. Furthermore, the feasibility of wafer-scale Rad-Hard PSE-inverter array has been demonstrated using chemical vapor deposition (CVD) grown monolayer MoS2. Our studies uncover the potential of 2D materials based PSE devices in future Rad-Hard integrated circuits (ICs).
@article{arxiv.2110.02601,
title = {Radiation-hardened and Repairable MoS$_2$ Field Effect Devices with Polymer Solid Electrolyte Gates},
author = {Di Chen and Jiankun Li and Zheng Wei and Xinjian Wei and Maguang Zhu and Jing Liu and Guangyu Zhang and Zhiyong Zhang and Jian-Hao Chen},
journal= {arXiv preprint arXiv:2110.02601},
year = {2021}
}