We address the electronic structure of quantum wells in polar-nonpolar oxide heterojunction systems focusing on the case of non-polar BaVO3 wells surrounded by polar LaTiO3 barriers. Our discussion is based on a density functional description using the local spin density approximation with local correlation corrections (LSDA+U). We conclude that a variety of quite different two-dimensional electron systems can occur at interfaces between insulating materials depending on band line-ups and on the geometrical arrangement of polarity discontinuities.
@article{arxiv.0810.0798,
title = {Quantum Wells in Polar-Nonpolar Oxide Heterojunction Systems},
author = {C. -C Joseph Wang and Bhagawan Sahu and Hongki Min and Wei-Cheng Lee and Allan H. MacDonald},
journal= {arXiv preprint arXiv:0810.0798},
year = {2009}
}
Comments
9 pages, 1 tex file and 15 figures(Final version for Physical Review B)