Electronic structure of the Mott insulator LaVO3 in a quantum well geometry

Y. Hotta; H. Wadati; A. Fujimori; T. Susaki; H. Y. Hwang

doi:10.1063/1.2422898

Electronic structure of the Mott insulator LaVO3 in a quantum well geometry

Materials Science 2015-06-25 v1 Strongly Correlated Electrons

Authors: Y. Hotta , H. Wadati , A. Fujimori , T. Susaki , H. Y. Hwang

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Abstract

We used x-ray photoemission spectroscopy to investigate the electronic structure of the Mott insulator LaVO3 embedded in LaAlO3. By limiting the upper layer of LaAlO3 to 3 unit cells, the underlying LaVO3 could be probed. The V 2p core-level spectra had both V3+ and V4+ components, and above 2 unit cell thick LaVO3, the structures exhibited spectra similar to bulk samples. The atomically flat surfaces enabled study of the emission angle dependence, which indicates the V4+ is localized to the topmost layer. These results demonstrate the potential for probing interface electronic structure in oxide ultrathin films by surface spectroscopy.

Keywords

Mott insulator LaVO3 electronic structure quantum well x-ray photoemission spectroscopy interface

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@article{arxiv.cond-mat/0607547,
  title  = {Electronic structure of the Mott insulator LaVO3 in a quantum well geometry},
  author = {Y. Hotta and H. Wadati and A. Fujimori and T. Susaki and H. Y. Hwang},
  journal= {arXiv preprint arXiv:cond-mat/0607547},
  year   = {2015}
}

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11 pages, 4 figures

Electronic structure of the Mott insulator LaVO3 in a quantum well geometry

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