The possible modification of quantized conductance of one-dimensional doped Mott insulator, where the Umklapp scattering plays an important role, is studied based on the method by Maslov-Stone and Ponomarenko. At T=0 and away from half-filling, the conductance is quantized as g=2e2/h and there is no renormalization by Umklapp scattering process. At finite temperatures, however, the quantization is affected depending on the gate voltage and temperature.
Cite
@article{arxiv.cond-mat/9708002,
title = {Quantized Conductance of One-Dimensional Doped Mott Insulator},
author = {Michiyasu Mori and Masao Ogata and Hidetoshi Fukuyama},
journal= {arXiv preprint arXiv:cond-mat/9708002},
year = {2009}
}