English

Planar Hall Effect MRAM

Materials Science 2007-05-23 v1
Authors: Y. Bason , L. Klein , J. -B. Yau , X. Hong , J. Hoffman , C. H. Ahn
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Abstract

We suggest a new type of magnetic random access memory (MRAM) that is based on the phenomenon of the planar Hall effect (PHE) in magnetic films, and we demonstrate this idea with manganite films. The PHE-MRAM is structurally simpler than currently developed MRAM that is based on magnetoresistance tunnel junctions (MTJ), with the tunnel junction structure being replaced by a single layer film.

Cite

@article{arxiv.cond-mat/0508772,
  title  = {Planar Hall Effect MRAM},
  author = {Y. Bason and L. Klein and J. -B. Yau and X. Hong and J. Hoffman and C. H. Ahn},
  journal= {arXiv preprint arXiv:cond-mat/0508772},
  year   = {2007}
}

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