Related papers: Planar Hall Effect MRAM
In Mn$_3$X (X=Sn, Ge) antiferromagnets domain walls are thick and remarkably complex because of the non-collinear arrangement of spins in each domain. A planar Hall effect (PHE), an electric field perpendicular to the applied current but…
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs…
A prototype of magnetoresistive random access memory (MRAM) based on magnetic tunnel junctions (MTJ) was fabricated with crossed-anisotropy of magnetic layers on either side of the tunnelling barrier layer. It is demonstrated that the…
In the anomalous Hall effect (AHE), the magnetization, electric field and the Hall current are presumed to be mutually vertical to each other. In this work, we propose an unconventional AHE where the magnetization, the electric field and…
The planar Hall effect (PHE), previously observed in Weyl and Dirac semimetals due to the chiral anomaly, emerges with a different origin in topological insulators (TIs), where in-plane magnetic fields induce resistivity anisotropy. In…
The planar Hall effect (PHE) is typically symmetric under magnetic field reversal, as required by the Onsager reciprocity relations. Recent advances have identified the antisymmetric PHE (under magnetic field reversal) as an intriguing…
The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in…
The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here…
The ferroelectric material is an important platform to realize non-volatile memories. So far, existing ferroelectric memory devices utilize out-of-plane polarization in ferroelectric thin films. In this paper, we propose a new type of…
In-plane anomalous Hall effect (IPAHE) is an unconventional anomalous Hall effect (AHE) with the Hall current flows in the plane spanned by the magnetization or magnetic field and the electric field. Here,we predict a stable two-dimensional…
Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient…
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…
Besides the negative longitudinal magnetoresistance (MR), planar Hall effect (PHE) is a newly emerging experimental tool to test the chiral anomaly or nontrivial Berry curvature in Weyl semimetals (WSMs). However, the origins of PHE in…
We report experimental observation of the Planar Hall effect (PHE) in a type-II Dirac semimetal PtTe$_2$. This unusual Hall effect is not expected in nonmagnetc materials such as PtTe$_2$, and has been observed previously mostly in magnetic…
The in-plane-magnetic-field-induced Hall effect (IPHE) observed in Weyl semimetals and PT-symmetric antiferromagnets has attracted increasing attention, as it breaks the stereotype that the Hall effect is induced by an out-of-plane magnetic…
A theory of anisotropic magnetoresistance (AMR) and planar Hall effect (PHE) in single cubic crystals and its experimental verifications are presented for the current in the (001) plane. In contrast to the general belief that AMR and PHE in…
A giant planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) is observed in TaP, a nonmagnetic Weyl semimetal with ultrahigh mobility. The perpendicular resistivity (i.e., the planar magnetic field applied normal to the current)…
In a magnetic metal, the Hall resistance is generally taken to be the sum of the ordinary Hall resistance and the anomalous Hall resistance. Here it is shown that this empirical relation is no longer valid when either the ordinary Hall…
Anomalous Hall Effect (AHE) response in magnetic systems is typically proportional to an out-of-plane magnetization component because of the restriction imposed by system symmetries, which demands that the magnetization, applied electric…
The planar Hall effect (PHE) is the appearance of an in-plane transverse voltage in the presence of coplanar electric and magnetic fields. Its hallmark is a characteristic $\pi$-periodic, i.e. even under a magnetic field reversal, angular…