English

PbTe/PbSnTe heterostructures as analogs of topological insulators

Mesoscale and Nanoscale Physics 2012-06-01 v3

Abstract

We investigate theoretically the PbTe/PbSnTe heterostructure grown in [111] direction, specifically a quantum wall (potential step of width d) of PbTe embedded in Pb_{1-x}Sn_{x}Te. For x large enough to lead to band inversion, and for large d, there are well-known gapless interface states associated with four L valleys. We show that for d \approx\ 10 nm the three pairs of states from oblique valleys strongly couple, and become gapped with a gap ~10 meV. On the other hand, the interface states from the [111] valley are essentially uncoupled, and they retain their helical character, remaining analogous to states at surfaces of thin layers of three-dimensional topological insulators. This opens up a possibility of studying the physics of two-dimensional helical Dirac fermions in heterostuctures of already widely studied IV-VI semicondcutors.

Keywords

Cite

@article{arxiv.1202.2315,
  title  = {PbTe/PbSnTe heterostructures as analogs of topological insulators},
  author = {Ryszard Buczko and Łukasz Cywiński},
  journal= {arXiv preprint arXiv:1202.2315},
  year   = {2012}
}

Comments

6 pages, 4 figures, final version published in Phys. Rev. B