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New Candidates for Topological Insulators : Pb-based chalcogenide series

Materials Science 2015-05-19 v1

Abstract

Here, we theoretically predict that the series of Pb-based layered chalcogenides, Pbn_nBi2_2Sen+3_{n+3} and Pbn_nSb2_2Ten+3_{n+3}, are possible new candidates for topological insulators. As nn increases, the phase transition from a topological insulator to a band insulator is found to occur between n=2n=2 and 3 for both series. Significantly, among the new topological insulators, we found a bulk band gap of 0.40eV in PbBi2_2Se4_4 which is one of the largest gap topological insulators, and that Pb2_2Sb2_2Te5_5 is located in the immediate vicinity of the topological phase boundary, making its topological phase easily tunable by changing external parameters such as lattice constants. Due to the three-dimensional Dirac cone at the phase boundary, massless Dirac fermions also may be easily accessible in Pb2_2Sb2_2Te5_5.

Keywords

Cite

@article{arxiv.1007.5480,
  title  = {New Candidates for Topological Insulators : Pb-based chalcogenide series},
  author = {Hosub Jin and Jung-Hwan Song and Arthur J. Freeman and Mercouri G. Kanatzidis},
  journal= {arXiv preprint arXiv:1007.5480},
  year   = {2015}
}
R2 v1 2026-06-21T15:55:13.357Z