In this work, we propose a dual-port cell design to address the pass disturb in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. We demonstrate that: i) the pass disturb-free feature originates from weakening of the depolarization field by the pass bias at the high-VTH (HVT) state and the screening of the applied field by channel at the low-VTH (LVT) state; ii) combined simulations and experimental demonstrations of dual-port design verify the disturb-free operation in a NAND string, overcoming a key challenge in single-port designs; iii) the proposed design can be incorporated in a highly scaled vertical NAND FeFET string and the pass gate can be incorporated into the existing 3D NAND with the negligible overhead of the pass gate interconnection through a global bottom pass gate contact in the substrate.
@article{arxiv.2403.04981,
title = {Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate},
author = {Zijian Zhao and Sola Woo and Khandker Akif Aabrar and Sharadindu Gopal Kirtania and Zhouhang Jiang and Shan Deng and Yi Xiao and Halid Mulaosmanovic and Stefan Duenkel and Dominik Kleimaier and Steven Soss and Sven Beyer and Rajiv Joshi and Scott Meninger and Mohamed Mohamed and Kijoon Kim and Jongho Woo and Suhwan Lim and Kwangsoo Kim and Wanki Kim and Daewon Ha and Vijaykrishnan Narayanan and Suman Datta and Shimeng Yu and Kai Ni},
journal= {arXiv preprint arXiv:2403.04981},
year = {2024}
}