English

Parallel Stitching of Two-Dimensional Materials

Materials Science 2015-12-15 v1

Abstract

Diverse parallel stitched two-dimensional heterostructures are synthesized, including metal-semiconductor (graphene-MoS2), semiconductor-semiconductor (WS2-MoS2), and insulator-semiconductor (hBN-MoS2), directly through selective sowing of aromatic molecules as the seeds in chemical vapor deposition (CVD) method. Our methodology enables the large-scale fabrication of lateral heterostructures with arbitrary patterns, and clean and precisely aligned interfaces, which offers tremendous potential for its application in integrated circuits.

Keywords

Cite

@article{arxiv.1512.04492,
  title  = {Parallel Stitching of Two-Dimensional Materials},
  author = {Xi Ling and Yuxuan Lin and Qiong Ma and Ziqiang Wang and Yi Song and Lili Yu and Shengxi Huang and Wenjing Fang and Xu Zhang and Allen L. Hsu and Yaqing Bie and Yi-Hsien Lee and Yimei Zhu and Lijun Wu and Ju Li and Pablo Jarillo-Herrero and Mildred S. Dresselhaus and Tomás Palacios and Jing Kong},
  journal= {arXiv preprint arXiv:1512.04492},
  year   = {2015}
}

Comments

30 pages, 4 figures, Accepted by Advanced Materials

R2 v1 2026-06-22T12:09:30.808Z