Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements for semiconductors are well explored and could possibly be satisfied by a number of layered two-dimensional (2D) materials, like for example transition-metal dichalcogenides or black phosphorus. The requirements for the gate insulator are arguably even more challenging and difficult to meet. In particular the combination of insulator to semiconductor which forms the central element of the metal oxide semiconductor field effect transistor (MOSFET) has to be of superior quality in order to build competitive devices. At the moment, hexagonal boron nitride (hBN) is the most common two-dimensional insulator and widely considered to be the most promising gate insulator in nanoscaled 2D material-based transistors. Here, we critically assess the material parameters of hBN and conclude that while its properties render hBN an ideal candidate for many applications in 2D nanoelectronics, hBN is most likely not suitable as a gate insulator for ultrascaled CMOS devices.
@article{arxiv.2008.04144,
title = {On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices},
author = {Theresia Knobloch and Yury Yu. Illarionov and Fabian Ducry and Christian Schleich and Stefan Wachter and Thomas Müller and Michael Waltl and Mario Lanza and Mikhail I. Vexler and Mathieu Luisier and Tibor Grasser},
journal= {arXiv preprint arXiv:2008.04144},
year = {2021}
}