Existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is evidenced experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective band gap of the structure; they are characterized by a high density and high carrier capture rate. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.
@article{arxiv.1104.5181,
title = {Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe},
author = {A. S. Gurevich and V. P. Kochereshko and J. Bleuse and H. Mariette and A. Waag and R. Akimoto},
journal= {arXiv preprint arXiv:1104.5181},
year = {2015}
}